Dopants and defects in InN and InGaN alloys
نویسندگان
چکیده
منابع مشابه
Band Gap of Hexagonal InN and InGaN Alloys
A survey of most recent studies of optical absorption, photoluminescence, photoluminescence excitation, and photomodulated reflectance spectra of single-crystalline hexagonal InN layers is presented. The samples studied were undoped n-type InN with electron concentrations between 6 1018 and 4 1019 cm– 3. It has been found that hexagonal InN is a narrow-gap semiconductor with a band gap of about...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2006
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2005.12.082